Frequency-dependent electrical properties of ferroelectric BaTi2 O5 single crystal

Nahum Masó, Xinyan Yue, Takashi Goto, Anthony R. West

研究成果: Article査読

8 被引用数 (Scopus)

抄録

Analysis and modeling of impedance spectroscopy data of ferroelectric BaTi2 O5 single crystal has been carried out at temperatures both below and above the ferroelectric Curie temperature, T C. The most appropriate equivalent circuit is found to consist of a parallel combination of a resistor (R), capacitor (C), and constant phase element (CPE). Below TC, the resistance R is too large to measure and the circuit simplifies to C-CPE. Above TC, R shows Arrhenius behavior with low values of conductivity, eg ∼4× 10-7 S cm-1 at 800 K and high activation energy, 1.13(2) eV, and represents a thermally activated dc hopping process associated with leakage transport of either electrons or holes through the crystal lattice. C is frequency-independent, passes through a maximum at the ferroelectric-paraelectric transition temperature, TC ∼475°C, represents the limiting high frequency capacitance of the crystal and is attributed to the response of the individual dipoles that are responsible for the ferroelectricity. The A parameter of the CPE also passes through a maximum at TC, is not thermally activated in the same manner as R but shows similar temperature dependence to that of C. The physical origin of the CPE, with interlinked resistive and capacitive components, whose relative contributions are governed by the power law n parameter, may be associated with dipole-dipole interactions and reflect the time- and frequency-dependence of their cooperative nature.

本文言語English
論文番号024107
ジャーナルJournal of Applied Physics
109
2
DOI
出版ステータスPublished - 2011 1月 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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