Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions

Motoya Shinozaki, Junta Igarashi, Hideo Sato, Hideo Ohno

研究成果: Article査読

4 被引用数 (Scopus)

抄録

We investigate free-layer size D dependence of effective anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions by homodynedetected ferromagnetic resonance. The effective anisotropy field HeffK monotonically increases with decreasing D for a device with the referencelayer size much larger than the free-layer size. In contrast, HeffK does not increase in a monotonic manner for a device with the reference-layer size comparable to the free-layer size. We reveal that the difference can be explained by the variation of the anisotropy field in the vicinity of the device edge.

本文言語English
論文番号043001
ジャーナルApplied Physics Express
11
4
DOI
出版ステータスPublished - 2018 4月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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