Fracture toughness of the interface between CVD diamond film and silicon substrate in the relation with methane concentration in the source gas mixture

H. Takahashi, S. Kamiya, M. Saka, H. Abé

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Diamond films produced by chemical vapor deposition (CVD) have been reported to show various excellent properties. However, low toughness of diamond films, especially the interface between the films and substrates, has been a severe problem. In order to find the dominant factors to control the adhesive strength of CVD diamond films, we obtained diamond films with various crystalline structures deposited on silicon (100) substrates under various methane concentrations in the source gas mixture. The toughness of the interface between the diamond film and silicon substrate was evaluated for the first time by a recently developed method. The toughness showed an interesting behavior with respect to the variation of methane concentration. The obtained results were quantitatively compared to the data already obtained for the case of CVD diamond particles deposited on silicon substrates.

本文言語English
ページ(範囲)760-764
ページ数5
ジャーナルDiamond and Related Materials
10
3-7
DOI
出版ステータスPublished - 2001 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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