Forming-free colossal resistive switching effect in rare-earth-oxide Gd2 O3 films for memristor applications

Xun Cao, Xiaomin Li, Xiangdong Gao, Weidong Yu, Xinjun Liu, Yiwen Zhang, Lidong Chen, Xinhong Cheng

研究成果: Article査読

131 被引用数 (Scopus)

抄録

The reproducible forming-free resistive switching (RS) behavior in rare-earth-oxide Gd2 O3 polycrystalline thin film was demonstrated. The characteristic of this forming-free RS was similar to that of other forming-necessary binary RS materials except that its initial resistance starts from not the high resistance state (HRS) but the low resistance state (LRS). An ultrahigh resistance switching ratio from HRS to LRS of about six to seven orders of magnitude was achieved at a bias voltage of 0.6 V. Mechanism analysis indicated that the existence of metallic Gd in the Gd2 O3 films plays an important role in the forming-free RS performance. Our work provides a novel material with interesting RS behavior, which is beneficial to deepen our understanding of the origin of RS phenomenon.

本文言語English
論文番号073723
ジャーナルJournal of Applied Physics
106
7
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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