Formation process of MnBi thin films by Williams' method

Y. Iwama, Yukio Takeno

    研究成果: Article査読

    15 被引用数 (Scopus)

    抄録

    Williams has found that when Mn and Bi are successively evaporated on a glass substrate, followed by prolonged annealing around 300 °C, a ferromagnetic MnBi thin film can be obtained with its c‐axis perpendicular to the film plane. In order to elucidate the formation process of the film, Rutherford backscattering (RBS) experiment, X‐ray diffractometry, electron microscope study, and magnetic measurement are carried out. It is found that at the first stage of annealing up to 250 °C a non‐magnetic transitional compound Mn1.2Bi is formed, and during the subsequent annealing at 250 °C, the final MnBi crystals with the aligned c‐axes nucleate, and grow at the expense of the transitional phase. It seems likely that at the last stage of reaction, a few Bi crystals remaining in the transitional phase may serve as the nuclei.

    本文言語English
    ページ(範囲)75-83
    ページ数9
    ジャーナルphysica status solidi (a)
    76
    1
    DOI
    出版ステータスPublished - 1983 1 1

    ASJC Scopus subject areas

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学

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