TY - JOUR
T1 - Formation of ZnO nanostructures in energy-controlled hollow-type magnetron RF plasma
AU - Kumeta, Keisuke
AU - Ono, Hideki
AU - Iizuka, Satoru
PY - 2010/4/30
Y1 - 2010/4/30
N2 - In this study, we investigated how zinc, sputtered from a zinc target, reacts with oxygen on the substrate to form ZnO nanostructures when the discharge parameters, such as gas flow ratio and target bias voltage, are controlled in O2/Ar plasma. The deposits were estimated by SEM and Raman spectroscopy. Under conditions of a Zn to Ar optical emission intensity ratio of 2/1, a target voltage of - 550 V, a total pressure of 40 Pa, a substrate temperature of 150 °C, an RF power of 50 W, and a deposition time of 30 min, many vertically aligned ZnO nanorods were observed to be deposited on the substrate. The diameter of the rods was typically 50 nm. It was found that the film morphology can be controlled by the sputtering rate of zinc varied by the target bias voltage and gas flow rate.
AB - In this study, we investigated how zinc, sputtered from a zinc target, reacts with oxygen on the substrate to form ZnO nanostructures when the discharge parameters, such as gas flow ratio and target bias voltage, are controlled in O2/Ar plasma. The deposits were estimated by SEM and Raman spectroscopy. Under conditions of a Zn to Ar optical emission intensity ratio of 2/1, a target voltage of - 550 V, a total pressure of 40 Pa, a substrate temperature of 150 °C, an RF power of 50 W, and a deposition time of 30 min, many vertically aligned ZnO nanorods were observed to be deposited on the substrate. The diameter of the rods was typically 50 nm. It was found that the film morphology can be controlled by the sputtering rate of zinc varied by the target bias voltage and gas flow rate.
KW - Magnetron plasma
KW - RF plasma sputtering
KW - Vertically aligned nanorods
KW - Zinc oxide
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U2 - 10.1016/j.tsf.2009.11.048
DO - 10.1016/j.tsf.2009.11.048
M3 - Article
AN - SCOPUS:77949460766
VL - 518
SP - 3522
EP - 3525
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 13
ER -