Formation of ultra-shallow base with high boron-doping concentration for high-performance SiGe HBTs

Katsuya Oda, Makoto Miura, Hiromi Shimamoto, Katsuyoshi Washio

研究成果: Article査読

抄録

High-concentration in-situ boron-doping technique has been successfully developed to fabricate an ultra-shallow base layer of SiGe HBTs. Extremely high-concentration doping with abrupt profiles in the Si/SiGe layers can be achieved without high-temperature activation annealing, and good crystallinity of the grown layer has been obtained. Too high boron-doping has an impact on the crystallinity and on Ge content of boron-doped SiGe layers. High-resolution X-ray diffraction indicated that good crystallinity was achieved at B2H6 flow rate of below 0.25 sccm. By optimizing epitaxial growth conditions, an extremely high-concentration of boron-doping was achieved, and the resultant good crystallinity of the boron-doped SiGe layer gave a very high carrier concentration of 5 × 1020 cm-3. Accordingly, the high-concentration in-situ boron-doping combined with our continuous epitaxial growth technique is a powerful technique to fabricate future ultra-high-speed and low-power SiGe HBTs.

本文言語English
ページ(範囲)869-872
ページ数4
ジャーナルSolid-State Electronics
53
8
DOI
出版ステータスPublished - 2009 8
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

フィンガープリント

「Formation of ultra-shallow base with high boron-doping concentration for high-performance SiGe HBTs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル