Formation of two-dimensional electron and hole gases in undoped AlxGa1-xAs/GaAs heterostructures

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Two-dimensional electron or hole gases (2DEG or 2DHG) are confined at the same interface in an undoped heterostructure by an electric field generated by a top gate. The combination of ion-implanted ohmic regions, an undoped heterostructure with superlattice barriers, and a metal gate is used to fabricate structures by a conventional process without self-alignment. High-quality 2DEG and 2DHG with a carrier density up to 8×1011 cm-2 are formed with a small gate leakage current. Switching between 2DEG and 2DHG at the same heterointerface is achieved by changing the sign of the gate voltage.

本文言語English
ページ(範囲)588-590
ページ数3
ジャーナルJournal of Applied Physics
80
1
DOI
出版ステータスPublished - 1996 7 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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