Formation of Si islands from amorphous thin films upon thermal annealing

Yutaka Wakayama, Takashi Tagami, Shun Ichiro Tanaka

研究成果: Article査読

21 被引用数 (Scopus)

抄録

The mechanism of crystalline Si island formation from an amorphous film was discussed in relation to the free energy of the Si/SiO2 system. Agglomeration of the Si crystallite occurred forming islands, thus preventing a further increase in free energy. Crystal growth proceeded in two steps. At first, the size distribution of Si islands was unimodal but finally became bimodal during the crystallization process.

本文言語English
ページ(範囲)8492-8494
ページ数3
ジャーナルJournal of Applied Physics
85
12
DOI
出版ステータスPublished - 1999 6月 15
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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