Formation of p-n junction in double-walled carbon nanotubes based on heteromaterial encapsulation

Yongfeng Li, Rikizo Hatakeyama, Wataru Oohara, Toshiro Kaneko

研究成果: Article査読

6 被引用数 (Scopus)

抄録

The formation of p-n junction in double-walled carbon nanotubes (DWNTs) is successfully investigated for the first time through encapsulating heteromolecules/atoms via a plasma-ion irradiation method. DWNTs filled with both electron donor atoms and electron acceptor molecules are synthesized during the plasma ion-irradiation process. It is found that the electrical transport properties of DWNTs after encapsulating either Cs-C6o or Cs-I are significantly different from those of unipolar p- or n-type DWNTs encapsulating one kind of molecules or atoms. The p-n junctions with excellent rectifying characteristics are successfully realized in many of DWNT-based devices, suggesting a new way in making functional DWNTs.

本文言語English
論文番号095005
ジャーナルApplied Physics Express
2
9
DOI
出版ステータスPublished - 2009 9月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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