Formation of Mn oxide with thermal CVD and its diffusion barrier property between Cu and SiO2

Koji Neishi, Shiro Aki, Jun Iijirna, Junichi Koike

研究成果: Conference contribution

抄録

A manganese oxide layer was formed by thermal chemical vapor deposition(CVD) on a tetraethylorthosilicate (TEOS) oxide substrate. The thickness of the Mn oxide layer could be varied 2.6 to 10 nm depending on deposition temperature. Heat-treated samples of PVD Cu / CVD Mn oxide /SiO 2 indicated no interdiffusion. The CVD Mn oxide was found to be a good diffusion barrier layer.

本文言語English
ホスト出版物のタイトルMaterials and Processes for Advanced Interconnects for Microelectronics
ページ30-34
ページ数5
出版ステータスPublished - 2008 12 1
イベント2008 MRS Spring Meeting - San Francisco, CA, United States
継続期間: 2008 3 242008 3 28

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1079
ISSN(印刷版)0272-9172

Other

Other2008 MRS Spring Meeting
国/地域United States
CitySan Francisco, CA
Period08/3/2408/3/28

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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