Formation of high quality SiC on Si(100) at 900 °C using monomethylsilane gas-source MBE

H. Nakazawa, M. Suemitsu, S. Asami

研究成果: Conference article査読

抄録

We have conducted a systematic series of 3C-SiC/Si(100) gas-source MBE experiments using monomethylsilane (MMS: H3Si-CH3), and have obtained growth-temperature and MMS-pressure dependences of the grown film. As a result, an optimum growth temperature was found to exist for each pressure, which decreased with decreasing pressure. The low temperature degradation of the film is related to residual surface hydrogen termination as suggested from H2-temperature-programmed-desorption observations from MMS-adsorbed Si(100) surfaces. The high temperature degradation is understood by the onset of Si outdiffusion from the substrate into the film. A balance between these two competing processes accounts for the presence of the optimum growth temperature and its pressure dependence as well.

本文言語English
ページ(範囲)I/-
ジャーナルMaterials Science Forum
338
出版ステータスPublished - 2000
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 1999 10 101999 10 15

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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