High-quality octahedral and flattened diamond crystals have been successfully synthesized using the inert-gas curtain combustion method on amorphous SiC (a-SiC) film preformed on Si substrates. The number density and the diameter of the diamond crystals were controlled by the a-SiC film thickness, while their morphology varied with the growth temperature. Flattened diamonds appeared at lower deposition temperatures. SEM and Raman observations indicate excellent crystallinity of these diamonds.
|ジャーナル||Journal of Crystal Growth|
|出版ステータス||Published - 1998 1 1|
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