Formation of GaN layer on SiN surface using low-energy Ga ion implantation

Junichi Yanagisawa, Masaya Toda, Takeshi Kitamura, Hiroyoshi Matsumoto, Yoichi Akasaka

研究成果: Article査読

6 被引用数 (Scopus)

抄録

As a new method for fabricating gallium nitride (GaN) layers at the outer surface of silicon nitride (SiN) films, low-energy Ga ion irradiation on SiN films was performed, and the composition of the surface and the chemical-bond nature of the irradiated surfaces were measured by x-ray photoelectron spectroscopy (XPS). The peak position of the XPS spectrum of Ga 3d from the Ga irradiated SiN was shifted from the value of the metallic Ga to that of GaN, indicating the formation of GaN on the Ga irradiated SiN surface. Formation of GaN was also confirmed from the XPS spectra of N 1s signals. It was also found that a Ga irradiation energy up to 4 keV was useful to form GaN, and the implanted Ga atoms remained on the SiN surface as GaN after an annealing at 500 °C for 5 min under N2 gas pressure of 1× 10-4 Torr. Because GaN which was formed is positioned at the outermost region of the Ga irradiated SiN films, the possibility to use this surface as a substrate for the GaN growth is discussed.

本文言語English
ページ(範囲)3205-3208
ページ数4
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
23
6
DOI
出版ステータスPublished - 2005 11

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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