Formation of dihydride chains on H-terminated Si(100)-2×1 surfaces: Scanning tunneling microscopy and first-principles calculations

Yuji Suwa, Masaaki Fujimori, Seiji Heike, Yasuhiko Terada, Yoshihide Yoshimoto, Kazuto Akagi, Osamu Sugino, Tomihiro Hashizume

研究成果: Article査読

5 被引用数 (Scopus)

抄録

On H-terminated Si(100)-2×1 surface, dihydride chains are often observed along the SB step edge by scanning tunneling microscopy. They are located more than one Si dimer's distance from the step edge. To clarify the reason, we performed first principles calculations on the chain formation process. We found that H termination of the Si surface transforms the rebonded step edge into the combination of a dihydride chain and a nonrebonded step edge. The chain moves away from the step edge by changing positions with the neighboring Si-dimer row. We also investigated the reaction path of this exchange and found that it requires an additional hydrogen atom, which is available during the H-termination process.

本文言語English
論文番号205308
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
74
20
DOI
出版ステータスPublished - 2006 11月 15
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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