In this study, Al-Cr-N films were formed by a dc reactive sputtering process. The effect of the sputtering power and applied probe current on the emission density and ion current of reacting species in the plasma were determined by using optical emission spectroscope and a mass spectrometer. The formed films were characterized by X-ray diffraction, electron microscope analysis and auger electron spectroscopy.
|ジャーナル||Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals|
|出版ステータス||Published - 1999|
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