Formation of a thin SiO2 film using synchrotron radiation excited reaction

Taro Ogawa, Isao Ochiai, Kozo Mochiji, Atsushi Hiraiwa, Yuji Takakuwa, Michio Niwano, Nobuo Miyamoto

研究成果: Article査読

12 被引用数 (Scopus)

抄録

The possibility of altering an oxygen-adsorbed Si surface to SiO 2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO 2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H+ PSD explains this oxidation.

本文言語English
ページ(範囲)794-796
ページ数3
ジャーナルApplied Physics Letters
59
7
DOI
出版ステータスPublished - 1991

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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