Formation of a thin SiO2 film using synchrotron radiation excited reaction

Taro Ogawa, Isao Ochiai, Kozo Mochiji, Atsushi Hiraiwa, Yuji Takakuwa, Michio Niwano, Nobuo Miyamoto

研究成果: Article

11 引用 (Scopus)

抜粋

The possibility of altering an oxygen-adsorbed Si surface to SiO 2 using a synchrotron radiation (SR) excited reaction is evidenced for the first time. Oxygen gas is adsorbed on a clean Si surface, and soft x-ray is irradiated on it by SR. As a result, H partly terminated on the oxygen-adsorbed Si surface is eliminated and the surface becomes more SiO 2-like. This is proved by x-ray photoelectron spectroscopy (XPS) analysis. Photostimulated desorption (PSD) of H+ ions, which are emitted from the surface, is also detected during SR irradiation. The Si - O bond formation model followed by H+ PSD explains this oxidation.

元の言語English
ページ(範囲)794-796
ページ数3
ジャーナルApplied Physics Letters
59
発行部数7
DOI
出版物ステータスPublished - 1991 12 1

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

フィンガープリント Formation of a thin SiO<sub>2</sub> film using synchrotron radiation excited reaction' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Ogawa, T., Ochiai, I., Mochiji, K., Hiraiwa, A., Takakuwa, Y., Niwano, M., & Miyamoto, N. (1991). Formation of a thin SiO2 film using synchrotron radiation excited reaction. Applied Physics Letters, 59(7), 794-796. https://doi.org/10.1063/1.105345