Formation of a chiral surface state and interlayer conduction in a bulk quantum Hall system

S. Uji, C. Terakura, M. Takashita, T. Terashima, Hayuyoshi Aoki, J. S. Brooks, S. Tanaka, S. Maki, J. Yamada, S. Nakatsuji

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Resistance measurements have been performed for the bulk quantum Hall system (TMTSF)2AsF6, where TMTSF denotes tetramethyltetraselenafulvalene. The interlayer resistance in the quantum Hall states is found to be independent of both temperature and quantum number at low temperatures. This fact can be ascribed to the formation of the chiral surface state, but the resistivity is much smaller than theoretical prediction. Sharp peaks in the interlayer resistance appear at transition fields between the adjacent quantum Hall states. The results suggest the presence of an intermediate state, which is not necessarily expected from standard theory.

本文言語English
ページ(範囲)1650-1653
ページ数4
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
60
3
DOI
出版ステータスPublished - 1999 1 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

フィンガープリント 「Formation of a chiral surface state and interlayer conduction in a bulk quantum Hall system」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル