Formation of 1.7-nm-thick-EOT Germanium Dioxide film with a high-quality interface using a direct neutral beam oxidation process

Akira Wada, Rui Zhang, Shinichi Takagi, Seiji Samukawa

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Germanium dioxide (GeO2) films with a high-quality interface were formed using a damage-free and low-temperature neutral beam oxidation (NBO) process. Combining the NBO process with hydrogen (H) radical native oxide removal treatment creates a high-quality GeO2/Ge interface (EOT = 1.7 nm) with an extremely low interface state density (Dit) of less than 1 × 1011 cm-2eV-1.

本文言語English
ホスト出版物のタイトルSiGe, Ge, and Related Compounds 5
ホスト出版物のサブタイトルMaterials, Processing, and Devices
ページ1085-1090
ページ数6
9
DOI
出版ステータスPublished - 2012
イベント5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
継続期間: 2012 10 72012 10 12

出版物シリーズ

名前ECS Transactions
番号9
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
CountryUnited States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • Engineering(all)

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