Formation mechanism of a faceted interface: In situ observation of the Si(100) crystal-melt interface during crystal growth

M. Tokairin, K. Fujiwara, K. Kutsukake, N. Usami, K. Nakajima

研究成果: Article査読

37 被引用数 (Scopus)

抄録

We investigated the formation mechanism of a faceted crystal-melt interface by in situ observation. It was directly proved that a wavy perturbation is introduced into a planar crystal-melt interface and the perturbation results in zigzag facets. Such a facet formation process was observed when growth velocity was high, although planar interfaces were maintained at low growth velocities. It was shown by theoretical analysis that the negative temperature gradient generated by the latent heat of crystallization at high growth velocities amplifies the perturbation and leads to the facet formation.

本文言語English
論文番号174108
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
80
17
DOI
出版ステータスPublished - 2009 11 12

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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