Formation and characterization of sub-nanometer scale cF8 Ge precipitates in Si-based amorphous matrix

Dmitri V. Louzguine-Luzgin, Parmanand Sharma, Mikio Fukuhara, Andriy Dmytruk, Akihisa Inoue

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Sub-nanometer size cF8 Ge clusters are found to be homogeneously distributed within the Si-Mn amorphous matrix of the SiGeMn thin films deposited by sputtering technique on silicon substrate. The existence of such clusters is observed by XRD and TEM. The electrical conduction in such a composite film seems to be governed by the variable range hopping. Such a two-phase semiconductive composite material with nearly atomic-scale phase separation may be considered as a suitable functional material for nano-electronics and nano-electromechanical systems.

本文言語English
ページ(範囲)5865-5869
ページ数5
ジャーナルJournal of Nanoscience and Nanotechnology
9
10
DOI
出版ステータスPublished - 2009 10

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

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