Flux-mediated epitaxy: General application in vapor phase epitaxy to single crystal quality of complex oxide films

Y. Matsumoto, R. Takahashi, H. Koinuma

研究成果: Conference article査読

17 被引用数 (Scopus)

抄録

We propose a general term flux-mediated epitaxy (FME) to single crystal quality of complex oxide thin films in vapor-phase epitaxy. The key is a flux, which is frequently used in a bulk process for lowering a process temperature and suppressing incongruent melt. The successful application of the flux to the bulk single crystal growth allows us to expect a similar benefit even in the case of vapor-phase epitaxy. In this paper, we discuss on the capability of this general concept 'FME' for controlling phases and crystallinity of the complex oxide films, showing some examples such as optical, ferromagnetic oxide and high-Tc superconductor.

本文言語English
ページ(範囲)325-330
ページ数6
ジャーナルJournal of Crystal Growth
275
1-2
DOI
出版ステータスPublished - 2005 2 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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