Fluorine diffusion assisted by diffusing silicon on the Si (111) - (7×7) surface

Y. Fujikawa, S. Kuwano, K. S. Nakayama, T. Nagao, J. T. Sadowski, R. Z. Bahktizin, Toshio Sakurai, Y. Asari, J. Nara, T. Ohno

研究成果: Article査読

5 被引用数 (Scopus)

抄録

The diffusion process of fluorine (F) atoms on the Si (111) - (7×7) surface is investigated using high-temperature scanning tunneling microscopy. The kinetic parameters of F hopping agree well with those of the diffusing silicon (Si) atoms, which implies that of all reaction processes, the Si diffusion serves as the rate-determining one. Deposition of Si on the surface is found to enhance F hopping, which supports the above-mentioned observation. Theory reveals that the replacement of F adsorption sites by diffusing Si atoms is the key process in the diffusion mechanism.

本文言語English
論文番号234710
ジャーナルJournal of Chemical Physics
129
23
DOI
出版ステータスPublished - 2008

ASJC Scopus subject areas

  • 物理学および天文学(全般)
  • 物理化学および理論化学

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