Fluoride single crystals for the next generation lithography

Teruhiko Nawata, Yoji Inui, Toshiro Mabuchi, Naoto Mochizuki, Isao Masada, Eiichi Nishijinia, Hiroki Sato, Tsuguo Fukuda

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

BaLiF3 single crystal has been studied as the candidate for the last lens material of the next generation high index immersion lithography system. Although the refractive index of BaLiF3 is 1.64 at 193nm which is not sufficient for the requirement, other optical properties such as 193nm transparency and laser durability fulfill the requirement. It is estimated that the cause of both high SBR part and inhomogeneity of refractive index of BaLiF3 seems to present along the faces of slip planes which are observed by crossed Nicol observation. As a result of comparative study of various direction perpendiculars to the growth axis, good crystallinity with less slip planes has been obtained by shifting the growth axis from 〈100〉 which is adequate for the last lens production. MgF2 single crystal studied as the polarizer material for high power ArF laser oscillator, and crystal with excellent laser durability and large diameter (> 100mm) has been developed by CZ technique. In addition crystals oriented along both c-axis and a-axis were successfully grown.

本文言語English
ホスト出版物のタイトルOptical Microlithography XXI
DOI
出版ステータスPublished - 2008 6 25
イベントOptical Microlithography XXI - San Jose, CA, United States
継続期間: 2008 2 262008 2 29

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
6924
ISSN(印刷版)0277-786X

Conference

ConferenceOptical Microlithography XXI
国/地域United States
CitySan Jose, CA
Period08/2/2608/2/29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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