Fluorescence EXAFS analysis of local structures around Cr atoms in (Ga,Cr)As

H. Ofuchi, M. Yamada, J. Okabayashi, M. Mizuguchi, K. Ono, Y. Takeda, M. Oshima, H. Akinaga

研究成果: Conference article査読

4 被引用数 (Scopus)

抄録

In this work, geometric structures for diluted magnetic semiconductor (Ga,Cr)As films grown by low-temperature molecular beam epitaxy were investigated by fluorescence extended X-ray absorption fine structure (EXAFS) measurements. The XAFS analysis has revealed that the majority of Cr atoms in the (Ga,Cr)As film substitute the Ga atoms in the GaAs lattice up to the Cr content x=0.145. The abrupt change of the Cr-As bond lengths was observed between Cr content x=0.06 and 0.145, which is due to inhomogeneous distribution of Cr atoms in GaAs matrix. It is expected that the paramagnetic behavior at room temperature in the samples above x=0.145 is due to the inhomogeneous distribution of the Cr atoms doped in the GaAs matrix.

本文言語English
ページ(範囲)651-653
ページ数3
ジャーナルPhysica B: Condensed Matter
376-377
1
DOI
出版ステータスPublished - 2006 4 1
外部発表はい
イベントProceedings of the 23rd International Conference on Defects in Semiconductors -
継続期間: 2005 7 242005 7 29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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