Floating gate memory based on ferritin nanodots with high-k gate dielectrics

Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru

    研究成果: Article査読

    12 被引用数 (Scopus)

    抄録

    The memory characteristics of nanodot-type floating gate memory with high-k tunnel oxide were investigated by measuring the memory characteristics of metal-oxide-semiconductor (MOS) capacitors with biomineralized inorganic nanodots. Biomineralized iron bio nanodots (Fe-BNDs) accommodated in ferritin were utilized as a storage charge. High-density and monolayer Fe-BNDs were absorbed by high-k tunnel oxide. Fabricated MOS capacitors showed clear hysteresis in capacitance-voltage (C-V) characteristics. The observed hysteresis in C-V characteristics was occurred by charging and discharging to Fe-BNDs. A large memory window and good retention characteristic were obtained using high-k as tunnel oxide. This is caused by the difference in the charging mechanism to Fe-BND. This research confirmed that the combination of bio nanodot floating gate memory with high-k film is promising for next-generation memory devices.

    本文言語English
    論文番号04C153
    ジャーナルJapanese journal of applied physics
    48
    4 PART 2
    DOI
    出版ステータスPublished - 2009 4月 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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