Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability

Ute Zschieschang, Frederik Ante, Tatsuya Yamamoto, Kazuo Takimiya, Hirokazu Kuwabara, Masaaki Ikeda, Tsuyoshi Sekitani, Takao Someya, Klaus Kern, Hagen Klauk

研究成果: Article査読

193 被引用数 (Scopus)

抄録

Flexible transistore and circuits based on dinaphtho-[2,3-b:2′, 3′-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm2 V-1 s-1 and the ring oscillators have a stage delay of 18 μs. Due to stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air. (Figure Presented)

本文言語English
ページ(範囲)982-985
ページ数4
ジャーナルAdvanced Materials
22
9
DOI
出版ステータスPublished - 2010 3 5
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 材料力学
  • 機械工学

フィンガープリント

「Flexible low-voltage organic transistors and circuits based on a high-mobility organic semiconductor with good air stability」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル