Flat-lying semiconductor-insulator interfacial layer in DNTT thin films

Min Cherl Jung, Matthew R. Leyden, Gueorgui O. Nikiforov, Michael V. Lee, Han Koo Lee, Tae Joo Shin, Kazuo Takimiya, Yabing Qi

研究成果: Article査読

35 被引用数 (Scopus)

抄録

The molecular order of organic semiconductors at the gate dielectric is the most critical factor determining carrier mobility in thin film transistors since the conducting channel forms at the dielectric interface. Despite its fundamental importance, this semiconductor-insulator interface is not well understood, primarily because it is buried within the device. We fabricated dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) thin film transistors by thermal evaporation in vacuum onto substrates held at different temperatures and systematically correlated the extracted charge mobility to the crystal grain size and crystal orientation. As a result, we identify a molecular layer of flat-lying DNTT molecules at the semiconductor-insulator interface. It is likely that such a layer might form in other material systems as well, and could be one of the factors reducing charge transport. Controlling this interfacial flat-lying layer may raise the ultimate possible device performance for thin film devices.

本文言語English
ページ(範囲)1833-1840
ページ数8
ジャーナルACS Applied Materials and Interfaces
7
3
DOI
出版ステータスPublished - 2015 1月 28
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)

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