First principles study on the strain dependence of thermal oxidation and hydrogen annealing effect at Si/SiO2 interface in V-MOSFET

Shingo Kawachi, Hiroki Shirakawa, Masaaki Araidai, Hiroyuki Kageshima, Tetsuo Endoh, Kenji Shiraishi

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Gate insulator of vertical MOSFET (V-MOSFET) is formed by silicon oxide. However, Si pillar cannot keep the structure during oxidation process because the Si atoms disappear from bulk (missing-Si). Moreover, the effect of hydrogen annealing for VMOSFET under the typical condition becomes weaker than that for planer MOSFET. In this study, we revealed the physical origin of missing-Si and hydrogen annealing effects by using first principles calculation method. We considered that the strain which is accumulated at the Si/SiO2 interface in V-MOSFET due to pillar structures. In this study, we clarified the strain dependence of thermal oxidation of V-MOSFET based on the Si-emission model [1,2]. The obtained results indicate that the compressive strain is one of the causes of the missing-Si. Furthermore, we investigated the strain dependence of the effect of hydrogen annealing. As a result, we revealed that hydrogen annealing temperature of VMOSFET should be lower than that of planer-MOSFET.

本文言語English
ホスト出版物のタイトルSemiconductors, Dielectrics, and Metals for Nanoelectronics 14
編集者S. Kar, K. Kita, D. Landheer, D. Misra
出版社Electrochemical Society Inc.
ページ293-299
ページ数7
5
ISBN(電子版)9781607687221
DOI
出版ステータスPublished - 2016
イベントSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting - Honolulu, United States
継続期間: 2016 10 22016 10 7

出版物シリーズ

名前ECS Transactions
番号5
75
ISSN(印刷版)1938-6737
ISSN(電子版)1938-5862

Other

OtherSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 14 - PRiME 2016/230th ECS Meeting
国/地域United States
CityHonolulu
Period16/10/216/10/7

ASJC Scopus subject areas

  • 工学(全般)

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