First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

H. Honjo, T. V.A. Nguyen, S. Fukami, H. Sato, S. Ikeda, T. Hanyu, H. Ohno, T. Watanabe, T. Nasuno, C. Zhang, T. Tanigawa, S. Miura, H. Inoue, M. Niwa, T. Yoshiduka, Y. Noguchi, M. Yasuhira, A. Tamakoshi, M. Natsui, Y. MaH. Koike, Y. Takahashi, K. Furuya, H. Shen, T. Endoh

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

For the first time, we demonstrated 55 nm-CMOS/ spin-orbit-torque-device hybrid magnetic random-access memory (SOT-MRAM) cell with magnetic field free writing. For field free writing, we developed canted SOT device under 300 mm BEOL process full compatible with 400°C thermal tolerance. Moreover, we developed its advanced process as follows; SOT channel layer PVD process for high spin Hall angle under 400°C thermal tolerance, low damage RIE technology of MTJ for high TMR/thermal stability factor (Δ) and ultra-smooth surface metal via process under SOT channel to reduce contact resistance.By above developed technologies, our canted SOT devices fabricated under a 400°C thermal tolerance successfully achieved fast write speed of 0.35 ns without an external magnetic field, a large enough Δ of 70 for non-volatile memory (retention time is over 10 years), and a high TMR ratio of 167%, for the first time. Moreover, we successfully demonstrated field free SOT-MRAM performance.

本文言語English
ホスト出版物のタイトル2019 IEEE International Electron Devices Meeting, IEDM 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728140315
DOI
出版ステータスPublished - 2019 12
イベント65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States
継続期間: 2019 12 72019 12 11

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
2019-December
ISSN(印刷版)0163-1918

Conference

Conference65th Annual IEEE International Electron Devices Meeting, IEDM 2019
国/地域United States
CitySan Francisco
Period19/12/719/12/11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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