Finite element method analysis of nanoscratch test for the evaluation of interface adhesion strength in Cu thin films on Si substrate

Atsuko Sekiguchi, Junichi Koike

研究成果: Article

抜粋

Mechanical processes of the nanoscratch test are investigated using a finite element analysis of Cu/Ta/SiO2/Si multilayer films. The calculated stress distribution at the moment of delamination suggests that delamination occurs in a small region of approximately 100 nm. The driving force for delamination is the stress concentration due to strain-incompatibility at the Cu/ Ta interface resulting from the large plastic deformation in Cu. The degree of stress concentration is found to depend on internal variables, such as plastic deformation, residual stress, and the elastic modulus, and on the magnitude of lateral force.

元の言語English
ページ(範囲)249-256
ページ数8
ジャーナルJapanese journal of applied physics
47
発行部数1
DOI
出版物ステータスPublished - 2008 1 18

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

フィンガープリント Finite element method analysis of nanoscratch test for the evaluation of interface adhesion strength in Cu thin films on Si substrate' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用