FinFET-based flex-Vth SRAM design for drastic standby-leakage-current reduction

Shin Ichi O'uchi, Meishoku Masahara, Kazuhiko Endo, Yongxun Liu, Takashi Matsukawa, Kunihiro Sakamoto, Toshihiro Sekigawa, Hanpel Koike, Eiichi Suzuki

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Aiming at drastically reducing standby leakage current. an SRAM using Four-Terminal (4T-) FinFETs, named Flex-Vth SRAM, with a dynamic row-by-row threshold voltage control (RRTC) was developed. The Flex-Vth SRAM realizes an extremely low standby-leakage current thanks to the flexible threshold-voltage (Vth) controllability of the 4T- FinFETs, while its access speed and static noise margin (SNM) are maintained. A TCAD-based Monte Carlo simulation indicates that even when the process-induced random variation in the device performance is taken into account, the Flex-Vth SRAM reduces the leakage current to 1/100 of that of a standard SRAM in a 256 × 256 array, where 20-nm-gate-length technologies with the same on-current are assumed.

本文言語English
ページ(範囲)534-542
ページ数9
ジャーナルIEICE Transactions on Electronics
E91-C
4
DOI
出版ステータスPublished - 2008 1 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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