Fine frequency tuning in resonant sensors

C. Cabuz, K. Fukatsu, H. Hashimoto, S. Shoji, T. Kurabayashi, K. Minami, M. Esashi

研究成果: Conference contribution

13 被引用数 (Scopus)

抄録

To realize highly sensitive resonant IR sensors the control of mechanical properties of the p+ silicon film is essential. Microfocus Raman spectroscopy and Secondary Ion Mass Spectrometry were used to measure the stress and boron concentration profile in the p+ silicon film respectively. Measurements of bending in cantilevers, of transversal stress gradient and boron profile in the films were found as being consistent with each other. Prediction of mechanical properties of micromechanical structure can be realized by using these techniques. Fine tuning of the resonance frequency in the final, packaged device, was realized by using an electrostatically activated axial force.

本文言語English
ホスト出版物のタイトルAn Investigations of Micro Structures, Sensors, Actuators, Machines and Robotic Systems
出版社Publ by IEEE
ページ245-250
ページ数6
ISBN(印刷版)078031834X
出版ステータスPublished - 1994 1 1
イベントProceedings of the IEEE Micro Electro Mechanical Systems - Oiso, Jpn
継続期間: 1994 1 251994 1 28

Other

OtherProceedings of the IEEE Micro Electro Mechanical Systems
CityOiso, Jpn
Period94/1/2594/1/28

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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