Film thickness determining method of the silicon isotope superlattices by SIMS

Akio Takano, Yasuo Shimizu, Kohei M. Itoh

研究成果: Article査読

3 被引用数 (Scopus)

抄録

It is becoming important to evaluate silicon self-diffusion with progress of a silicon semiconductor industry. In order to evaluate the self-diffusion of silicon, silicon isotope superlattices (SLs) is the only marker. For this reason, it is important to correctly evaluate a film thickness and a depth distribution of isotope SLs by secondary ion mass spectrometry (SIMS). As for film thickness, it is difficult to estimate the thicknesses correctly if the cycles of SLs are short. In this work, first, we report the determination of the film thickness for short-period SLs using mixing roughness-information (MRI) analysis to SIMS profile. Next, the uncertainty of the conventional method to determine the film thicknesses of SLs is determined. It was found that the conventional methods cannot correctly determine film thickness of short-period-isotope SLs where film thickness differs for every layer.

本文言語English
ページ(範囲)1430-1432
ページ数3
ジャーナルApplied Surface Science
255
4
DOI
出版ステータスPublished - 2008 12 15
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

フィンガープリント

「Film thickness determining method of the silicon isotope superlattices by SIMS」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル