Field ion-scanning tunneling microscopy study of c84 on the si(100) surface

Tomihiro Hashizume, Xiang Dong Wang, Yuichiro Nishina, Hisanori Shinohara, Yahachi Saito, Toshio Sakurai

    研究成果: Article査読

    30 被引用数 (Scopus)

    抄録

    Initial stage and monolayer/multilayer adsorption of C84 fullerene on the Si(100)2 x 1 surface was investigated by field ion-scanning tunneling microscopy. The C84 molecules reside stably at room temperature in the trough formed by Si dimer rows. The nearest neighbour distance of the C84 molecules is approximately 14 A. For the first and second layers, only the disordered adsorption geometry was observed. When C84 was deposited while keeping the substrate at 100 to 150 °C, the fee crystal formation was observed above the third layer with its lattice constant of 17.1 A.

    本文言語English
    ページ(範囲)L132-L134
    ジャーナルJapanese journal of applied physics
    32
    1 A
    DOI
    出版ステータスPublished - 1993 1

    ASJC Scopus subject areas

    • 工学(全般)
    • 物理学および天文学(全般)

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