Field ion-scanning tunneling microscopy study of c60 on the si(100) surface

Tomihiro Hashizume, Xiang Dong Wang, Yuichiro Nishina, Hisanori Shinohara, Yahachi Saito, Young Kuk, Toshio Sakurai

研究成果: Article査読

162 被引用数 (Scopus)

抄録

Field ion-scanning tunneling microscopy was employed to study the monolayer and multilayer adsorption behaviors of the C60 fullerene on the Si(100)2×1 surface. The C60 molecules reside stably in the trough at room temperature without rotation, encompassing the 8 neighbouring dimer-forming surface Si atoms with the nearest neighbour distance of 12 Å. For the first and second layers, only local ordering of square and quasi-hexagonal patterns was observed. The orderly Stranski-Krastanov mode island formation with the hexagonal packing was observed above the third layer with its lattice constant of 10.4 Å.

本文言語English
ページ(範囲)L880-L883
ジャーナルJapanese journal of applied physics
31
7
DOI
出版ステータスPublished - 1992 7月
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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