Field-induced transition of f electron nature in CeRu2Si2

H. Aoki, S. Uji, T. Terashima, M. Takashita, Y. Onuki

研究成果: Article査読

5 被引用数 (Scopus)

抄録

We have studied the de Haas-van Alphen (dHvA) effect for field ranges both below and above the metamagnetic transition field (Hm) in CeRu2Si2. The Fermi surfaces are found to change from those of the itinerant 4f electrons below Hm to those of the localized 4f electrons above Hm. The dHvA frequency around Hm has been measured in detail as function of magnetic field strength and temperature. The observed variation of the frequency implies that the transition of the Fermi surface becomes less sharp at higher temperatures.

本文言語English
ページ(範囲)231-234
ページ数4
ジャーナルPhysica B: Physics of Condensed Matter
201
C
DOI
出版ステータスPublished - 1994

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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