Field-Emission Spectroscopy/Microscopy Studies of Chemical-Vapor-Deposition-Grown Diamond Particles

Shozo Kono, Tadahiko Goto, Kei Sato, Tadashi Abukawa, Makoto Kitabatake, Akihiko Watanabe, Masahiro Deguchi

研究成果: Article査読

3 被引用数 (Scopus)

抄録

A sample for field-emission (FE) measurements was fabricated by first seeding high-pressure synthetic diamond particles (DPs) over a high-conductivity n-type Si(001) wafer and then growing nondoped diamond layers onto the DP surfaces by chemical vapor deposition. We have characterized several important features of this sample using field emission spectroscopy (FES) and field emission microscopy (FEM). FES measurements showed that a FES peak starts at the substrate Fermi level and decreases in kinetic energy along with an increase in the peak width as the electric field is increased. FEM measurements showed that there are "hot spots" that strongly field-emit electrons. A plausible model of FE for isolated DPs on a silicon substrate is proposed in which the key factor responsible for FE is a resistive interface between the DP and the substrate.

本文言語English
ページ(範囲)299-306
ページ数8
ジャーナルNew Diamond and Frontier Carbon Technology
11
5
出版ステータスPublished - 2001

ASJC Scopus subject areas

  • Materials Science(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

フィンガープリント 「Field-Emission Spectroscopy/Microscopy Studies of Chemical-Vapor-Deposition-Grown Diamond Particles」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル