Field-emission and photo-detection characteristics of laser molecular beam epitaxy grown homoepitaxial GaN nanowall networks

Prashant Tyagi, Ch Ramesh, Alka Sharma, Sudhir Husale, S. S. Kushvaha, M. Senthil Kumar

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Field emission and photo-detection properties of homoepitaxial GaN nanowall network structure grown on GaN template by laser molecular beam epitaxy technique are demonstrated. The GaN nanowall network has a tip-width of 8–12 nm and exhibited a band-edge photoluminescence emission at 3.53 eV. From the field-emission characterization, a very low turn-on field of 0.68 V/μm and a high emission current density of 2.22 mA/cm 2 (at 2.38 V/μm) are observed. Photo-detection measurements were also performed on the GaN nanowall network structure under ultraviolet (UV) light irradiation using metal-semiconductor-metal device structure where, a photo-responsivity of 7.28 A/W is obtained at 3 V biasing.

本文言語English
ページ(範囲)80-84
ページ数5
ジャーナルMaterials Science in Semiconductor Processing
97
DOI
出版ステータスPublished - 2019 7
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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