Field effect transistors for terahertz detection: Physics and first imaging applications

Wojciech Knap, Mikhail Dyakonov, Dominique Coquillat, Frederic Teppe, Nina Dyakonova, Jerzy Łusakowski, Krzysztof Karpierz, MacIej Sakowicz, Gintaras Valusis, Dalius Seliuta, Irmantas Kasalynas, Abdelouahad El Fatimy, Y. M. Meziani, Taiichi Otsuji

研究成果: Article査読

311 被引用数 (Scopus)

抄録

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.

本文言語English
ページ(範囲)1319-1337
ページ数19
ジャーナルJournal of Infrared, Millimeter, and Terahertz Waves
30
12
DOI
出版ステータスPublished - 2009

ASJC Scopus subject areas

  • 放射線
  • 器械工学
  • 凝縮系物理学
  • 電子工学および電気工学

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