Field control of anisotropic spin transport and spin helix dynamics in a modulation-doped GaAs quantum well

S. Anghel, F. Passmann, A. Singh, C. Ruppert, A. V. Poshakinskiy, S. A. Tarasenko, J. N. Moore, G. Yusa, T. Mano, T. Noda, X. Li, A. D. Bristow, M. Betz

研究成果: Article査読

11 被引用数 (Scopus)

抄録

Electron spin transport and dynamics are investigated in a single, high-mobility, modulation-doped, GaAs quantum well using ultrafast two-color Kerr-rotation microspectroscopy, supported by qualitative kinetic theory simulations of spin diffusion and transport. Evolution of the spins is governed by the Dresselhaus bulk and Rashba structural inversion asymmetries, which manifest as an effective magnetic field that can be extracted directly from the experimental coherent spin precession. A spin-precession length λSOI is defined as one complete precession in the effective magnetic field. It is observed that application of (i) an out-of-plane electric field changes the spin decay time and λSOI through the Rashba component of the spin-orbit coupling, (ii) an in-plane magnetic field allows for extraction of the Dresselhaus and Rashba parameters, and (iii) an in-plane electric field markedly modifies both the λSOI and diffusion coefficient.

本文言語English
論文番号125410
ジャーナルPhysical Review B
97
12
DOI
出版ステータスPublished - 2018 3 9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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