FET characteristics of dinaphthothienothiophene (DNTT) on Si/SiO 2 substrates with various surface-modifications

Tatsuya Yamamoto, Kazuo Takimiya

研究成果: Article査読

39 被引用数 (Scopus)

抄録

Field-effect transistors (FETs) consisting of vapor-deposited thin-film of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) as an active layer on silanized Si/SiO2 substrates were fabricated and evaluated. Depending on the length of alkyl groups in silanization reagents, FET characteristics of the devices were affected: with octadecyltrichlorosilane (C18-OTS), devices showing superior FET characteristics up to FET mobility of 3.1 cm2 V-1 s-1 were obtained.

本文言語English
ページ(範囲)57-59
ページ数3
ジャーナルJournal of Photopolymer Science and Technology
20
1
DOI
出版ステータスPublished - 2007
外部発表はい

ASJC Scopus subject areas

  • ポリマーおよびプラスチック
  • 有機化学
  • 材料化学

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