TY - JOUR
T1 - Ferromagnetic thin film noise suppressor integrated to on-chip transmission lines
AU - Yamaguchi, Masahiro
AU - Muroga, Sho
AU - Endo, Yasushi
AU - Suzuki, Mitsuru
AU - Inagaki, Takayoshi
AU - Mitsuzuka, Yoshio
N1 - Funding Information:
The authors thank Prof. Y. Shimada for thoughtful discussions, Mr. N. Sato for measurement of initial permeability and resistivity of the CoZrNb film, and Mr. S. Dhungana for proofreading. This work was supported in part by the Strategic Information and Communications R&D Promotion Programme (SCOPE) of the Ministry of Internal Affairs and Communications, Japan. This work was also supported in part by Grants-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan, and by Special Coordination Funds for Promoting Science and Technology from the Formation of Innovation Center for Fusion of Advanced Technologies. This work was also supported in part by Priority Assistance for the Formation of Worldwide Renowned Centers of Research Centers of Research—The Global COE Program (Project: Center of Education and Research for Information Electrics Systems) from MEXT, Japan. This work was also supported in part by the R&D Center of Excellence for Integrated Microsystems, Tohoku University. The VLSI chip in this study was fabricated in the chip fabrication program of the VLSI Design and Education Center (VDEC) at The University of Tokyo in collaboration with Oki Electric Industry Inc.
Copyright:
Copyright 2010 Elsevier B.V., All rights reserved.
PY - 2010/6
Y1 - 2010/6
N2 - This paper studies the effects of integrating soft magnetic films to a 0.15 μm rule Silicon-On-Insulator (SOI)-CMOS on-chip microstrip line and coplanar line. In microstrip lines, the intensity of ferromagnetic resonance loss increases with increase in the distance between the magnetic film and ground plane because the magnetic fields from the signal and ground lines are mutually opposite; also, the counter field from the ground current becomes weaker according to distance of the ground plane from the magnetic film. For that reason, it is good to locate the signal line close to the magnetic film and the ground line far away. Furthermore, greater loss occurs with a coplanar line than with microstrip line because both the signal and ground line currents contribute to loss generation.
AB - This paper studies the effects of integrating soft magnetic films to a 0.15 μm rule Silicon-On-Insulator (SOI)-CMOS on-chip microstrip line and coplanar line. In microstrip lines, the intensity of ferromagnetic resonance loss increases with increase in the distance between the magnetic film and ground plane because the magnetic fields from the signal and ground lines are mutually opposite; also, the counter field from the ground current becomes weaker according to distance of the ground plane from the magnetic film. For that reason, it is good to locate the signal line close to the magnetic film and the ground line far away. Furthermore, greater loss occurs with a coplanar line than with microstrip line because both the signal and ground line currents contribute to loss generation.
KW - Electromagnetic compatibility (EMC)
KW - Electromagnetic noise suppressor
KW - Ferromagnetic resonance (FMR) loss
KW - Joule loss
KW - On-chip transmission line
KW - Thin films
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U2 - 10.1109/TMAG.2010.2044763
DO - 10.1109/TMAG.2010.2044763
M3 - Article
AN - SCOPUS:77952836465
VL - 46
SP - 2450
EP - 2453
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 6
M1 - 5467583
ER -