Ferromagnetic thin film noise suppressor integrated to on-chip transmission lines

Masahiro Yamaguchi, Sho Muroga, Yasushi Endo, Mitsuru Suzuki, Takayoshi Inagaki, Yoshio Mitsuzuka

研究成果: Article査読

14 被引用数 (Scopus)

抄録

This paper studies the effects of integrating soft magnetic films to a 0.15 μm rule Silicon-On-Insulator (SOI)-CMOS on-chip microstrip line and coplanar line. In microstrip lines, the intensity of ferromagnetic resonance loss increases with increase in the distance between the magnetic film and ground plane because the magnetic fields from the signal and ground lines are mutually opposite; also, the counter field from the ground current becomes weaker according to distance of the ground plane from the magnetic film. For that reason, it is good to locate the signal line close to the magnetic film and the ground line far away. Furthermore, greater loss occurs with a coplanar line than with microstrip line because both the signal and ground line currents contribute to loss generation.

本文言語English
論文番号5467583
ページ(範囲)2450-2453
ページ数4
ジャーナルIEEE Transactions on Magnetics
46
6
DOI
出版ステータスPublished - 2010 6

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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