This paper studies the effects of integrating soft magnetic films to a 0.15 μm rule Silicon-On-Insulator (SOI)-CMOS on-chip microstrip line and coplanar line. In microstrip lines, the intensity of ferromagnetic resonance loss increases with increase in the distance between the magnetic film and ground plane because the magnetic fields from the signal and ground lines are mutually opposite; also, the counter field from the ground current becomes weaker according to distance of the ground plane from the magnetic film. For that reason, it is good to locate the signal line close to the magnetic film and the ground line far away. Furthermore, greater loss occurs with a coplanar line than with microstrip line because both the signal and ground line currents contribute to loss generation.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering