@article{b673cff3fd224571a049e1d3939d3127,
title = "Ferromagnetic semiconductor heterostructures for spintronics",
abstract = "Ferromagnetism in transition-metal-doped III-V and II-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed.",
keywords = "(Ga,Mn)As, (In,Mn)As, Anomalous Hall effect, Ferromagnetic semiconductors, II-VI compounds, III-V compounds, Magnetic circular dichroism, Magnetic tunneling junctions, Magnetization manipulation, p-d Zener model",
author = "Tomasz Dietl and Hideo Ohno and Fumihiro Matsukura",
note = "Funding Information: Manuscript received October 11, 2006; revised January 19, 2007. The work of T. Dietl was supported in part under the NANOSPIN E. C. Project FP6-2002-IST-015728 and in part by the Humboldt Foundation. The work of H. Ohno and F. Matsukura was supported in part under the Ministry of Education, Culture, Sports, Science, and Technology, Japan, by the IT Program of RR2002 and in part under the Tohoku University in 21st Century COE program. The review of this paper was arranged by Editor H. Morkoc.",
year = "2007",
month = may,
doi = "10.1109/TED.2007.894622",
language = "English",
volume = "54",
pages = "945--954",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",
}