Ferromagnetic semiconductor heterostructures for spintronics

研究成果: Article査読

26 被引用数 (Scopus)

抄録

Ferromagnetism in transition-metal-doped III-V and II-VI compound semiconductors and their heterostructures allow exploration of unprecedented possibilities, in which spin degrees of freedom and more common charge degrees of freedom are combined. These include quantum heterostructures that incorporate ferromagnetism, electric field as well as light control of ferromagnetism, and magnetization reversal by electrical means. Possibilities of achieving high ferromagnetic-transition temperature are also discussed.

本文言語English
ページ(範囲)945-954
ページ数10
ジャーナルIEEE Transactions on Electron Devices
54
5
DOI
出版ステータスPublished - 2007 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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