Ferromagnetic III-V heterostructures

研究成果: Article査読

49 被引用数 (Scopus)

抄録

Properties of the ferromagnetic III-V semiconductor (Ga,Mn)As and heterostructures based on it are reviewed. A model based on hole-mediated ferromagnetic interaction is shown to successfully describe the ferromagnetic transition temperature of (Ga,Mn)As. Spontaneous splitting of resonant tunneling spectra was compared with theory and shown to result from the spin splitting of the valence band. The first demonstration of spin-dependent scattering in magnetic semiconductor trilayers as well as electrical spin injection is also reviewed.

本文言語English
ページ(範囲)2039-2043
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
18
4
出版ステータスPublished - 2000 12月 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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