Nano-sized inverted domain dots in ferroelectric materials have potential application in ultrahigh-density rewritable data storage systems. Herein, a data storage system is presented based on scanning non-linear dielectric microscopy and a thin film of ferroelectric single-crystal lithium tantalite. Through domain engineering, we succeeded to form an smallest artificial nano-domain single dot of 5.1 nm in diameter and artificial nano-domain dot-array with a memory density of 10.1 Tbit/inch2 and a bit spacing of 8.0 nm, representing the highest memory density for rewritable data storage reported to date. Sub-nanosecond (500psec) domain switching speed also has been achieved. Next, long term retention characteristic of data with inverted domain dots is investigated by conducting heat treatment test. Obtained life time of inverted dot with the radius of 50nm was 16.9 years at 80°C. Finally, actual information storage with low bit error and high memory density was performed. A bit error ratio of less than 17times;10-4 was achieved at an areal density of 258 Gbit/inch2. Moreover, actual information storage is demonstrated at a density of 1 Tbit/inch2.
|出版ステータス||Published - 2006 12 1|
|イベント||7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006 - San Mateo, CA, United States|
継続期間: 2006 11 5 → 2006 11 8
|Other||7th Annual Non-Volatile Memory Technology Symposium, NVMTS 2006|
|City||San Mateo, CA|
|Period||06/11/5 → 06/11/8|
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