Ferroelectric Ba Ti2 O5 thin film prepared by laser ablation

Chuanbin Wang, Rong Tu, Takashi Goto

研究成果: Article査読

15 被引用数 (Scopus)

抄録

Ferroelectric b -axis oriented Ba Ti2 O5 thin film was successfully prepared on MgO (100) substrates by laser ablation. The effects of substrate temperature (Tsub) and oxygen partial pressure (PO2) on the crystal structure, surface morphology, and dielectric property of the film were investigated. Ba Ti2 O5 thin films were obtained at Tsub =923-973 K and PO2 =vacuum to 17.5 Pa on MgO (100) substrates. The orientation of the films changed from (710) to (020) depending on Tsub and PO2. The optimum conditions for preparing film with a dense and elongated texture were Tsub =973 K and PO2 =12.5 Pa. The permittivity of the ferroelectric b -axis oriented Ba Ti2 O5 thin film showed a sharp peak (∼2000) at 750 K.

本文言語English
ページ(範囲)304-307
ページ数4
ジャーナルJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
25
2
DOI
出版ステータスPublished - 2007

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜

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