Ferroelectric b -axis oriented Ba Ti2 O5 thin film was successfully prepared on MgO (100) substrates by laser ablation. The effects of substrate temperature (Tsub) and oxygen partial pressure (PO2) on the crystal structure, surface morphology, and dielectric property of the film were investigated. Ba Ti2 O5 thin films were obtained at Tsub =923-973 K and PO2 =vacuum to 17.5 Pa on MgO (100) substrates. The orientation of the films changed from (710) to (020) depending on Tsub and PO2. The optimum conditions for preparing film with a dense and elongated texture were Tsub =973 K and PO2 =12.5 Pa. The permittivity of the ferroelectric b -axis oriented Ba Ti2 O5 thin film showed a sharp peak (∼2000) at 750 K.
|ジャーナル||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films|
|出版ステータス||Published - 2007|
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