Fermi surface and superconductivity in noncentrosymmetric CeRh Si3

T. Terashima, Y. Takahide, T. Matsumoto, S. Uji, N. Kimura, H. Aoki, H. Harima

研究成果: Article査読

25 被引用数 (Scopus)

抄録

We report measurements of the ac magnetic susceptibility and de Haas-van Alphen effect (dHvA) in CeRh Si3 up to a pressure P=29.5 kbar with the field in the c direction. The observed Fermi surface suggests that Ce 4f electrons are itinerant even when antiferromagnetic order occurs. Effective masses decrease with P: no enhancement is observed as the antiferromagnetic transition temperature is reduced by the application of pressure. Analyses of dHvA oscillations in the mixed state indicate that the influence of the superconducting energy gap is negligible for some orbits.

本文言語English
論文番号054506
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
76
5
DOI
出版ステータスPublished - 2007 8 7

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学

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