Fermi-level tuning of the Dirac surface state in (Bi1-xSbx)2Se3 thin films

Yosuke Satake, Junichi Shiogai, Daichi Takane, Keiko Yamada, Kohei Fujiwara, Seigo Souma, Takafumi Sato, Takashi Takahashi, Atsushi Tsukazaki

研究成果: Article査読

7 被引用数 (Scopus)

抄録

We report on the electronic states and the transport properties of three-dimensional topological insulator (Bi1-xSbx)2Se3 ternary alloy thin films grown on an isostructural Bi2Se3 buffer layer on InP substrates. By angle-resolved photoemission spectroscopy, we clearly detected Dirac surface states with a large bulk band gap of 0.2-0.3 eV in the (Bi1-xSbx)2Se3 film with x = 0.70. In addition, we observed by Hall effect measurements that the dominant charge carrier converts from electron (n-type) to hole (p-type) at around x = 0.7, indicating that the Fermi level can be controlled across the Dirac point. Indeed, the carrier transport was shown to be governed by Dirac surface state in 0.63 x 0.75. These features suggest that Fermi-level tunable (Bi1-xSbx)2Se3-based heterostructures provide a platform for extracting exotic topological phenomena.

本文言語English
論文番号085501
ジャーナルJournal of Physics Condensed Matter
30
8
DOI
出版ステータスPublished - 2018 2 1

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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「Fermi-level tuning of the Dirac surface state in (Bi<sub>1-x</sub>Sb<sub>x</sub>)<sub>2</sub>Se<sub>3</sub> thin films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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