Feature profile evolution in plasma processing using wireless on-wafer monitoring system

研究成果: Chapter

1 引用 (Scopus)

抜粋

Etching profile anomalies occur around large-scale 3-dimensional (3D) structures due to distortion in the ion sheath and ion trajectories. To solve this problem, a system to predict such etching anomalies was developed by combining on-wafer sheath shaped sensor and simulations based on a neural network and a database. The sensor could measure the sheath voltage and saturation ion current density and sheath thickness can be calculated from them. A database was built by using the results from sensor measurements and etching experiments with samples with large vertical steps, which enables prediction of etching shape anomalies from measured parameters. Finally, the system could predict etching shape anomalies around large vertical steps.

元の言語English
ホスト出版物のタイトルSpringerBriefs in Applied Sciences and Technology
出版者Springer Verlag
ページ33-38
ページ数6
DOI
出版物ステータスPublished - 2014 1 1

出版物シリーズ

名前SpringerBriefs in Applied Sciences and Technology
102
ISSN(印刷物)2191-530X
ISSN(電子版)2191-5318

ASJC Scopus subject areas

  • Biotechnology
  • Chemical Engineering(all)
  • Mathematics(all)
  • Materials Science(all)
  • Energy Engineering and Power Technology
  • Engineering(all)

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  • これを引用

    Samukawa, S. (2014). Feature profile evolution in plasma processing using wireless on-wafer monitoring system. : SpringerBriefs in Applied Sciences and Technology (pp. 33-38). (SpringerBriefs in Applied Sciences and Technology; 巻数 102). Springer Verlag. https://doi.org/10.1007/978-4-431-54795-2_4